IR HiRel offers enhanced radiation hardened MOSFET family

IR HiRel, an Infineon Technologies AG company, announced the availability of a new family of radiation hardened MOSFETs based on the proprietary N-channel R9 technology platform.

The 100V, 35A MOSFETs are ideally suited to mission-critical applications requiring an operating life up to and beyond 15 years. Target applications include space-grade DC-DC converters, intermediate bus converters, motor controllers and other high speed switching designs.

The IRHNJ9A7130 and IRHNJ9A3130 are fully characterized for TID (total ionizing dose) immunity to radiation of 100 kRads and 300 kRads respectively. An RDS(on) of 25 mΩ (typical) is 33% lower than the previous device generation. In combination with increased drain current capability (35A vs. 22A), this allows the MOSFETs to provide increased power density and reduced power losses in switching applications.

The MOSFETs have improved Single Event Effect (SEE) immunity and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90 MeV/(mg/cm²); at least 10% higher than previous generations. Both of the new devices are packaged in a hermetically sealed, lightweight, surface mount ceramic package (SMD-0.5), but they are also available in bare die form.

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