X-FAB: first 110 nm BCD-on-SOI foundry solution

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X-FAB Silicon Foundries SE is the first foundry to introduce a 110 nm BCD-on-SOI solution. The new XT011 platform reflects the growing need for greater digital integration and processing capabilities within analog applications.

By moving to a lower process node, the X-FAB XT011 offering provides double the standard cell library density of its established XT018 180 nm BCD-on-SOI semiconductor platform. It also takes up 35% less area for SONOS embedded flash implementations. Ultra-low on-resistance (R(ds)on ) high-voltage N-channel device performance is another important property (with a greater than 25% improvement on the XT018 process). The thermal performance has been enhanced significantly, which means that high-current applications can be better addressed – matching what would normally be expected of a bulk BCD process.

Enabling the delivery of AEC-Q100 Grade 0 compliant design implementations, this new BCD-on-SOI technology is highly robust. An operating temperature range of -40°C to 175°C is covered. Elevated levels of resilience to EMI are exhibited too. With no parasitic bipolar effects being witnessed, the risk of latch-ups occurring can be eliminated – thereby assuring the highest degrees of operational reliability.

A comprehensive process design kit (PDK) provided by X-FAB for XT011 as well as a broad array of IP elements, such as SRAM, ROM, SONOS-based flash and embedded EEPROM, are available.

The XT011 process is primarily targeted at next-generation automotive applications that require an increased level of data processing capabilities. In addition, it will provide a path to a smaller geometry for existing industrial and medical products.

Devices using the new XT011 110 nm BCD-on-SOI semiconductor process will be fabricated at X-FAB’s facility in Corbeil-Essonnes, near Paris. Volume production will commence in the second half of 2023.

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