At PCIM Europe ROHM Semiconductor will showcase its new power semiconductors, including high-performance solutions for the e-mobility sector and beyond.
ROHM’s product highlights include:
4th Gen. SiC MOSFET: ROHM’s cutting-edge SiC MOSFET technology realized industry-leading low ON resistance, minimizing switching losses and supporting 15V and 18V gate-source voltage. It contributes to dramatic miniaturization and low power consumption in various applications including automotive inverters and various switching power supplies.
New molded SiC power modules: ROHM expands its package portfolio with “HSDIP20” and “DOT247”, installing the latest 4th Gen. SiC MOSFET 750V and 1200V devices in different RDS_on. Both achieve up to 30kW power application depending on their conditions.
Gate Drivers: The BM611x series is a 3,75KV isolation, AEC-Q100 certified gate driver device specially designed for xEV traction inverter application. The product family has a new member: BM6112 is designed for high power IGBT and SiC applications with an unique gate current of 20A.
Intelligent Low Side Power Devices (IPD): The BV1LExxxEFJ-C and BM2LExxxFJ-C series are a new generation of AEC-Q100 qualified 1-channel and 2-channel 40 V smart low side switches ideally designed for automotive and industrial applications.
730V Integrated Fly Back Converters: The BM2P06xMF IC series integrates a 730 V Si MOSFET and a PWM controller in one package and is ideal for industrial auxiliary power supply and SMPS applications.
Built-in 1700V SiC-MOSFET: BM2SC12xFP2-LBZ series is a quasi-resonant AC/DC converter that provides an optimum system for all products that have an electrical outlet.
150V GaN HEMT: ROHM’s 150V GaN HEMT GNE10xxTB are optimized for power supply circuits in industrial and communication equipment for industry highest (8V) gate breakdown voltage technology.