Nexperia launches e-mode GAN FETs for low and high-voltage applications

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Nexperia released its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150 V) and high (650 V) voltage applications. Nexperia’s new portfolio includes five 650 V rated e-mode GaN FETs (with RDS(on) values between 80 mΩ and 190 mΩ) in a choice of DFN 5×6 mm and DFN 8×8 mm packages. They improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power.

Nexperia now also offers a 100 V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150 V (7 mΩ) device in a FCLGA package. These devices are suitable for various low-voltage (<150 V), high-power applications to deliver, for example, more efficient DC-DC converters in data centers, faster charging (e-mobility and USB-C), smaller LiDAR transceivers, lower noise class D audio amplifiers and more power dense consumer devices like mobile phones, laptops, and games consoles.

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