New ICeGaN GaN power ICs by CGD
Cambridge GaN Devices (CGD), the fabless semiconductor company, has launched its lowest ever on-resistance (RDS(on)) parts which have been engineered with a new die and new packages to deliver the benefits of GaN to high-power applications such as data centres, inverters, motor drives and other industrial power supplies. New ICeGaN P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency
Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0 V turn off to minimise reverse conduction losses, ICeGaN ICs outperform discrete e-Mode GaN and other incumbent technologies. The new packages offer improved thermal resistance performance as low as 0.28 K/W – again, equivalent or better than anything else currently available on the market – and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability, enabling customers to address multi kW applications with ease. The new packages have also been engineered to improve productivity, with wettable flanks to simplify optical inspection.
Two demo boards feature the new P2 devices: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles, and a 3 kW totem-pole power factor correction demo board.
New P2 Series ICeGaN power ICs are sampling now.