Infineon : new 650 V CoolSiC Hybrid IGBT discrete family

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Infineon Technologies has launched a 650 V CoolSiC Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage. The CoolSiC hybrid product family combines key benefits of the 650 V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes.

The devices are especially suited for DC-DC power converters and power factor correction (PFC). These can typically be found in applications like battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), as well as server and telecom switched-mode-power supplies (SMPS).

The product family creates a bridge between pure silicon solutions and high performing SiC MOSFET designs. Even more, in comparison to pure silicon designs, Hybrid IGBTs can improve electromagnetic compatibility and system reliability. Because of the unipolar nature of Schottky barrier diodes, the diode can switch fast without severe oscillations and risk of a parasitic turn-on.

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