Vishay Intertechnology: new integrated 40 V MOSFET

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Vishay Intertechnology introduced a new 40 V n-channel MOSFET half bridge power stage (Vishay Siliconix SiZ240DT) that delivers increased power density and efficiency for white goods and industrial, medical, and telecom applications.

Two TrenchFET MOSFETs in the SiZ240DT are internally connected in a half-bridge configuration. The SiZ240DT’s Channel 1 MOSFET, which is typically used as the control switch in a synchronous buck converter, provides maximum on-resistance of 8.05 mΩ at 10 V and 12.25 mΩ at 4.5 V. The Channel 2 MOSFET, which is typically a synchronous switch, features on-resistance of 8.41 mΩ at 10 V and 13.30 mΩ at 4.5 V.

When combined with low gate charge of 6.9 nC (Channel 1) and 6.5 nC (Channel 2), the resulting on-resistance times gate charge FOM (figure of merit ) is 14 % lower than the next best device, enabling higher efficiency for fast switching applications.

The dual MOSFET released provides designers with a space-saving solution for motor control in vacuum cleaners, drones, power tools, home / office automation, and non-implantable medical devices, in addition to half-bridge pvower stages for synchronous buck DC/DC converters, wireless chargers, and switch-mode power supplies in telecom equipment and servers.

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