Toshiba Electronics Europe (TEE) has announced new 40V and 60V power MOSFETs based on the company’s latest generation U-MOS-IX-H trench semiconductor process.
Supplied in compact DPAK packaging, the devices are interesting for high-efficiency power conversion applications including AC-DC and DC-DC converters, power supplies and motor drives.
TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel MOSFETs can be driven by 4.5V logic levels and offer ultra-low maximum on resistance (RDS(ON)) ratings down to just 3.1mΩ (@ VGS = 10V).
TK3R1P04PL is a 40V MOSFET with a maximum RDS(ON) of 3.1mΩ and a maximum drain current (ID) rating of 58A (at a temperature of 25ºC).
TK4R4P06PL and TK6R7P06PL are 60V MOSFETs with respective maximum RDS(ON) and ID ratings of 4.4mΩ and 58A and 6.7mΩ and 46A.
All of the new MOSFETs are designed to operate with a low output charge to further optimise efficiency and performance.