Toshiba launches 40V and 60V MOSFETs in DPAK package

Posted 6 November 2017

Toshiba Electronics Europe (TEE) has announced new 40V and 60V power MOSFETs based on the company’s latest generation U-MOS-IX-H trench semiconductor process.

Supplied in compact DPAK packaging, the devices are interesting for high-efficiency power conversion applications including AC-DC and DC-DC converters, power supplies and motor drives.

TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel MOSFETs can be driven by 4.5V logic levels and offer ultra-low maximum on resistance (RDS(ON)) ratings down to just 3.1mΩ (@ VGS = 10V).

TK3R1P04PL is a 40V MOSFET with a maximum RDS(ON) of 3.1mΩ and a maximum drain current (ID) rating of 58A (at a temperature of 25ºC).

TK4R4P06PL and TK6R7P06PL are 60V MOSFETs with respective maximum RDS(ON) and ID ratings of 4.4mΩ and 58A and 6.7mΩ and 46A.

All of the new MOSFETs are designed to operate with a low output charge to further optimise efficiency and performance.

Contenuti correlati

  • Toshiba is the Fastest Growing HDD and SSD Vendor of 2016

    Toshiba was the fastest growing vendor in both the worldwide hard disk drive (HDD) segment, as well as in the solid state drive (SSD) segment in 2016 over 2015, as measured by revenue and units. These accolades...

  • Toshiba Introduces 40V N-channel Power MOSFET for Automotive

    Toshiba Electronics Europe has expanded its line-up of automotive power MOSFETs with a new 40V N-ch housed TO-220SM(W) package. The TKR74F04PB is ideal for a variety of high power automotive applications, including DC-DC converters, EPS (Electric Power...

  • Storage Trends 2015 – The Year of the eSSD

    NAND flash-based memory has already come to dominate the personal storage market, be it in laptops, tablets, smartphones or cameras. In enterprise applications where storage capacities for a single server are in the terabyte to petabyte ranges,...

Scopri le novità scelte per te x