Renesas expands 5G mmWave beamformer portfolio

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Renesas Electronics Corporation expanded its 5G beamformer IC family with two new dual-polarization mmWave devices optimized for 2×2 antenna architecture for 5G and broadband wireless applications with best-in-class performance at n257, n258, and 261 bands.

The highly integrated F5288 and F5268 transmitter/receiver (8T8R) chipsets feature a Tx output power capability of more than 15.5dBm linear output power per channel.

With this combination, Renesas enables cost-efficient radio design with extended signal reach for wireless infrastructure applications including wide-area, small cell and macro base stations, as well as CPE, fixed wireless access (FWA) access points, and various other applications.

Renesas’ third-generation mmWave beamformer ICs address all the beamforming capabilities required by 5G systems while achieving the highest linear RF output power in any silicon technology with high efficiency.

The ICs’ dual-polarization 8-channel architecture provides a highly symmetric and very low loss antenna routing network to improve overall antenna efficiency and reduce board costs.

The exposed die package allows for more efficient thermal management at the board with improved heat dissipation through the back of the IC. In addition, Renesas designed the package pinmap to simplify board design and reduce design risks. Lower complexity PCB design with minimum layer counts results in reduced board costs and faster time to market.

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