Infineon Technologies adds another industry standard package to its CoolSiC MOSFET 1200 V module family. The 62 mm device has been designed in half-bridge topology and is based on the trench chip technology.
Compared to a 62 mm IGBT module, the list of applications now additionally includes solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.
The 62 mm module features Infineon’s CoolSiC MOSFETs, which enable a high current density. Very low switching and conducting losses minimize cooling efforts, whereas operating the device at high switching frequency allows for using smaller magnetic components.
With a base plate and screw connections, the housing is characterized by a very robust mechanical design, which is optimized for highest system availability, a minimum of service cost and off-time losses.
The symmetrical internal design of the housing allows identical switching conditions for the upper and lower switch.
As an option, the thermal performance of the module can be improved even further with pre-applied thermal interface Material (TIM).