X-FAB Silicon Foundries, a specialty foundry for analog/mixed-signal and optoelectronic solutions, has made augmentations that extend the scope of its XS018 180 nm sensor process. As a result, the company is now able to offer a photodiode-specific process core module.
Whereas previously the XS018 process had been mainly focused on the fabrication of multi-pixel CMOS image sensors, this new module is dedicated to photodiode fabrication.
Through this module, X-FAB is now in a position to offer customers six different photodiode options. These cover wavelengths from ultra-violet (UV) right through to near-infra-red (NIR). The diverse operational parameters of the photodiodes in this family means that they can be aligned with various customer application requirements.
The new X-FAB photodiodes are capable of delivering best-in-class UV sensitivity, attaining 40% quantum efficiency (QE) in the UVA band, 50-60% QE in the UVB band and over 60% QE in the UVC band. In relation to NIR, significant performance improvements have also been witnessed. At 850 nm the photodiodes have 17% greater QE than legacy devices based on the original XH018 process, and at 905 nm there is a 5% QE increase witnessed. With a QE of approximately 90%, the human eye response option is highly suited to ambient light sensing applications.