Ampleon announced BLF0910H9LS600 LDMOS, a 600 Watt RF power amplifier transistor.
This is the first RF energy transistor using Ampleon’s latest Gen9HV 50V LDMOS process.
It is designed for use in industrial heating continuous wave (CW) RF energy applications in the 900 to 930 MHz ISM band.
The compact ceramic SOT502 package reduces the space required, and thereby the cost of amplifier designs.
The operating efficiency is typically above 68 % and the gain is typically 19.8 dB, measured with a VDS of 50 V in a 915 MHz CW class AB application.
By using two of these compact SOT502 packaged 600 Watt transistors, it is possible to architect a 1.2 kW RF power amplifier in the same space as a single SOT539 package.
The BLF0910H9LS600 has an integrated ESD protection and internal input matching.