Nexperia presents two new ASFETs

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Nexperia  announced new 80 V and 100 V ASFETs (Application-Specific MOSFETs ) with enhanced SOA performance, targeting hot-swap and soft-start applications in 5G telecom systems and 48 V server environments and industrial equipment needing e-fuse and battery protection.

ASFETs are a new breed of MOSFET optimized for use in particular design scenarios. By focusing on specific parameters critical to an application, sometimes at the expense of others that are less important in the same design, new levels of performance can be achieved. The new hot-swap ASFETs use a combination of Nexperia’s latest silicon technology and copper-clip package construction to significantly strengthen the Safe Operating Area (SOA) and minimize PCB area.

The new PSMN4R2-80YSE (80 V, 4.2 mΩ) and PSMN4R8-100YSE (100 V, 4.8 mΩ) hot-swap ASFETs are packaged in the Power-SO8 compatible LFPAK56E.

The unique internal copper-clip construction of the package improves thermal and electrical performance whilst substantially reducing footprint size. The new LFPAK56E products are just 5 mm x 6 mm x 1.1 mm, offering reductions of 80 % and 75 % for PCB footprint and device height respectively, compared to the D2PAK of previous generations. The devices also feature a maximum junction temperature of 175 °C, meeting IPC9592 regulations for telecoms and industrial applications.

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