At electronica 2014, Alliance Memory (Hall A5, Stand 224) will be highlighting its latest offering of legacy IC solutions, including high-speed CMOS synchronous DRAMs (SDRAM) and mobile low-power double data rate (DDR), DDR2, and DDR3 SDRAMs featuring a wide range of densities, configurations, package options, and temperature ratings.
The devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications.
Lead (Pb)- and halogen-free, all Alliance Memory products on display feature programmable read or write burst lengths. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Mobile Low-Power DDRs
Alliance Memory’s new mobile low-power DDRs are designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.
High-Speed CMOS DDR3 Synchronous DRAMs (SDRAM)
Alliance Memory is introducing new high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAMs) with high densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball and 96-ball FBGA packages. Offering a wide variety of configurations — including 128M x 8, 256M x 8, and 512M x 8 and 64M x 16, 128M x 16, and 256M x 16 — with a synchronous interface, the devices are available in commercial (0 °C to +85 °C), industrial (-40 °C to +95 °C), and automotive (-40 °C to +105 °C) temperature ranges. Operating from a single +1.5-V power supply, the DDR3 SDRAMs feature a very fast clock rate of 1600 MHz.
High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR SDRAM)
The latest high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) from Alliance Memory offer densities of 64 Mb, 128 Mb, 256 Mb, and 512 Mb and an industrial temperature range of -40 °C to +85 °C. Internally configured as four banks of 1M, 2M, 4M, or 8M words x 16 bits with a synchronous interface, the devices operate from a single +2.5-V (± 0.2 V) power supply, feature a fast clock rate of 200 MHz, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch.
High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM)
DDR2 SDRAMs from Alliance Memory include devices with densities of 512 Mb and 1 Gb, internally configured as four banks of 8M words x 16 bits, and eight banks of 8M x 16 bits and 16M x 8 bits. Offered in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages, the DDR2 SDRAMs feature a synchronous interface, operate from a single +1.8-V (± 0.1 V) power supply, and feature a fast clock rate of 400 MHz and data rate of 800 Mbps/pin. The devices are available in commercial (0 °C to +85 °C), industrial (-40 °C to +95 °C), and automotive (-40 °C to +105 °C) temperature ranges.
High-Speed CMOS Synchronous DRAMs (SDRAM)
Alliance Memory has extended its offering of 64M, 128M, and 256M high-speed CMOS synchronous DRAMs (SDRAM) with x32 devices in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA and 86-pin 400-mil plastic TSOP II packages. The 2M x 32, 4M x 32, and 8M x 32 devices feature fast access time from clock down to 5.4 ns and operate from a single +3.3-V (± 0.3 V) power supply. 256M SDRAMs offer a commercial temperature range of 0 °C to +70 °C and clock rate of 133 MHz, while the 64M and 128M devices feature an industrial temperature range from -40 °C to +85 °C with a higher clock rate of 166 MHz.